Preparation of epitaxial PbTiO 3 thin films by metalorganic vapor phase epitaxy under reduced pressure

In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of 650°C and a growth pressure of 15 Torr. The deposited films were examined using electron microprobe analysis, scanning electron microscopy and X-ray diffraction techniques which included the Laue method. The epitaxial nature of the grown PbTiO 3 thin films was established.